Silicon Carbide Micron Powder for Coated Abrasive Precision Lapping Film
Description:
Due to its high temperature performance, high electron saturation drift velocity, high breakdown voltage, low resistance and other characteristics, silicon carbide is considered to be an ideal choice for next-generation power devices, high-frequency devices and applications in high-temperature and high-voltage environments. It is regarded as the third The most important of the three generations of semiconductor materials.
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Specifications:
| Grit | Sic | F.C. | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Application:
High Temperature Performance: Silicon carbide has excellent high temperature performance and can operate at temperatures up to 600 degrees Celsius and even higher. In comparison, the operating temperature of traditional silicon materials can generally only reach about 150 degrees Celsius. This makes silicon carbide perform well in high-temperature environments, and has the potential for wide application in fields such as automotive electrification and aerospace.
High electron saturation drift velocity: Silicon carbide has a high electron saturation drift velocity, which means that under high electric field conditions, electrons can move quickly within the material, providing higher electron mobility and higher switching frequency. This makes silicon carbide outstanding in power devices, such as power converters, high-frequency switches and other fields.
High electrical breakdown field strength: The breakdown field strength of silicon carbide is many times higher than that of silicon, which makes it excellent in high-voltage applications, such as high-voltage power supplies, power transmission and distribution, etc. It has potential.
Low resistance and high breakdown voltage: Silicon carbide has a lower resistance, which means it can handle more current for the same size. Additionally, silicon carbide devices have advantages in high voltage applications due to high breakdown voltage.
High-frequency performance: Silicon carbide has high electron mobility and high electric field saturation drift speed, giving it potential advantages in high-frequency applications, such as radio frequency power amplifiers and wireless communication equipment.
Radiation resistance: Silicon carbide performs better in radiation resistance than silicon, which makes it potentially useful in high-radiation environments, such as nuclear energy facilities and space applications.
FAQ:
Q : How can you control your quality?
A : For each production processing, ZhenAn have complete QC system for the chemical composition and Physical properties. After production, all the goods will be tested, and the quality certificate will be shipped along with goods.
Q: Are you a manufacture or trader?
A: Both, we not only can provide the high quality products with the best price, but also can offer the best pre-sale service and after-service.
Q : Do you provide free samples?
A : Of course, free samples are available.
Q: What is your lead time?
A : It usually needs about 15- 20 days after receiving the PO.
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